| 摘要 |
<p>PURPOSE:To reduce a device area, increase the degree of integration, and obtain easily a thin film transistor memory with a smaller number of production processes by setting a portion which faces a lower part electrode of a lower part gate insulation film to a memory region, forming an upper part electrode on an upper part insulation film after the upper part electrode is directed at the whole body of a semiconductor layer, and consisting a portion corresponding to the memory region with a two layer- electrode comprising a lower layer metal film and an upper art metal film. CONSTITUTION:A lower part gate electrode G10 if formed so that it may face the central part of a semiconductor layer 13's channel in its longitudinal direction. A central part of a lower gate insulation film 12 at the opposite side of the lower gate electrode G16 is set to a memory region. On the other hand, an upper art gate electrode G20 is set as an electrode which faces the whole body of the semiconductor layer 13. The upper part gate electrode G20 is set to a two layer electrode which comprises a lower layer metal film 16 formed on the upper part gate insulation film and an upper layer metal film 17 laminated on the lower layer metal film 16. The lower layer metal film 16 comprises an oxide insulation film 16a by selectively oxidizing a portion compatible with a memory region of a lower gate insulation film 12 and an outward part from a position nearly on the opposite side of the central part.</p> |
