| 摘要 |
PURPOSE:To make a resonance tunnel effect take place and permit this effect to be suitable for a superhigh speed IC by providing a recessed or protruding region at the 1st semiconductor layer of a hetero junction interface which makes up a semiconductor device and preparing a potential well or barrier toward two dimensional electrons which are accumulated at a second semiconductor layer in the vicinity of the interface. CONSTITUTION:An N-type AlGaAs layer 2 in which donor impurities are doped is laminated on an undoped GaAs layer 4 which has a gap narrower than the layer 2 and has a low energy at the lower end of a conduction band while making its layer hold a position in the direction of Z and hetero-junction is obtained. Further, having a width of W1 and a depth of D1 which run in the direction of Y, a recessed region 6 is provided in the layer 2. In this way, potential in a hetero junction interface is changed by the recessed region 6 and then discontinuous gaps caused by a lower end energy are produced at even a junction interface in the direction of X as well as at the junction interface in the direction of Z. This makes potential at the base of the recessed region 6 lower than those of junction interfaces in regions except the region 6 and permits electrons to produce a tunnel effect. |
