| 摘要 |
PURPOSE:To facilitate the formation of a p-type layer and restrict a self- compensation effect for improvement of reproducibility by constructing the p-type layer with a layer to which P is added and a layer to which Li is added, or alternately depositing the two layers a plurality of times. CONSTITUTION:An n-type ZnSe layer 2 and a p-type ZnSe layer 3 are successively formed on an n-type GaAs substrate 1 by a MOCVD process, and thereafter an electrode 4 and an electrode 5 are provided on the back surface of the substrate 1 and on the surface of the layer 3, respectively. The layer 3 comprises a layer 31 to which P is added and a layer 32 to which Li is added. Those two layers are formed whereby although excessive Li is diffused from the layer 32 upon growth of crystal, the Li is left behind in the layer 31 and restricted in its diffusion to the layer 2. Further, the same effect can be yielded even in the case where the layer 3 is formed by alternately laminating an N added layer 31a and an Li added layer 32a and further superimposing a resulting formed layer a plurality of times. Hereby, the formation of the p-type layer is facilitated and allows a p-n junction to the yielded with good reproducibility without causing crystal defects. Thus, satisfactory current-voltage characteristics and blue-light emission characteristics. |
