| 摘要 |
The method for forming fine line width patterns on a semiconductor substrate comprises an upper photoresist film etching process, a SOG planarizing process and a positive pattern foroming process. The upper resist film etching process comprises coating a lower photoresist film (102) to dry-develop it, forming a negative patterns, coating a upper photoresist film (104) to dry- develop it and forming a phositive patterns. The SOG planarizing process comprises depositing an oxide film (105) to planarize it, forming a spacer (106). The intermediate oxide film (10) acts as msk when dry-developing of the lower resist film.
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