发明名称 FLAW RESISTANT SILICON NITRIDE-BASED SINTERED MATERIAL HAVING HIGH TOUGHNESS AND HIGH STRENGTH
摘要 PURPOSE:To enhance toughness, strength and flaw resistance by constituting this sintered material of the composition which consists of ZrO2, ZrN and the combined phase of Mg-Si-Zr-O-N system, beta-Si3N4 of acicular crystal and inevitable impurities and allowing a specified surface oxidative layer to be present. CONSTITUTION:A green compact is obtained by mixing (i) 1-27wt.% ZrN powder, (ii) 0.5-5wt.% SiO2 powder, (iii) 1-10wt.% MgO powder and (iv) the balance Si3N4 powder preferably consisting of alpha-Si3N4 as a main component and molding this mixture. Then when this green compact is primarily sintered at 1500-2000 deg.C at 1-50atm in a nitrogen atmosphere and secondarily sintered at 1700-2000 deg.C at 100-2000atm in a nitrogen atmosphere, the green compact is held for 30 minutes to 3 hours in an oxidative atmosphere contg. 5-1000ppm concn. of O2 at a prescribed temp. of 500-1300 deg.C in the temp. rising stage in the primary sintering and/or after secondary sintering, the sintered body is held for 30 minutes to 3 hours at a prescribed temp. of 500-1000 deg.C in the atmosphere. Thereby the material is obtained which consists of 0.1-20vol.% ZrO2, 0.1-14vol.% ZrN, 3-15vol.% combined phase of Mg-Si-Zr-O-N system, the balance beta-Si3N4 of acicular crystal and inevitable impurities and has a surface oxidative layer of 10-1000mum thickness wherein the concn. of ZrO2 is made higher as this layer approaches the surface side.
申请公布号 JPH03275566(A) 申请公布日期 1991.12.06
申请号 JP19900076350 申请日期 1990.03.26
申请人 MITSUBISHI MATERIALS CORP 发明人 KOYAMA TAKASHI;OSHIMA HIDEO;AIKAWA YASUTAKA
分类号 C04B35/584;C04B35/58;C04B41/80 主分类号 C04B35/584
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