| 摘要 |
PURPOSE:To make the peeling of a resist pattern formed on the surface of a metal material film hard to occur by forming the metal material film, thereafter ashing the surface of the metal material film, and removing foreign matter such as dirt and dust that are physically sucked to the surface of the film. CONSTITUTION:An insulating film, e.g. a PSG or BPSG film, is formed on the surface of a semiconductor substrate on which a semiconductor region of a MOSSFET and the like is formed. An aluminum film is formed thereon the sputtering. Then, the semiconductor wafer is heated at the temperature of 150-200 deg.C. O2 plasma is generated by high-frequency excitation at 500W. Ashing is performed for 300 seconds. A photoresist film is applied on the surface of the aluminum film of the semiconductor wafer for which the ashing is performed in this way. Soft baking is performed for 90 seconds at the temperature of about 100 deg.C. The photoresist film is selectively exposed and developed. Soft baking is further performed for the wafer for 3 minutes at the temperature of about 120 deg.C. Thus, the resist pattern having the width of about 1mum and the length of 100mum is formed. |
