| 摘要 |
<p>PURPOSE:To allow the stable and accurate transfer of fine patterns approximate to the resolution threshold by forming a chromium film and a PMMA film on a quartz substrate and forming PMMA film patterns, then partially removing the chromium film by the prescribed amt. from the end of the PMMA film patterns down to the inside. CONSTITUTION:The chromium film 5 is deposited by a vaccum vapor deposition method on the quartz substrate 1 and the polymethyl methacrylate PMMA 6 is applied thereon and is subjected to a heat treatment. After the prescribed patterns are subjected to exposing with an electron beam, the patterns PMMA is subjected to spray development by using a developing soln. mixture composed of methyl isobutyl ketone and isopropyl alcohol to form the resist patterns of the PMMA 6. The chromium film 5 is subjected to wet etching by a cerium nitrate ammon soln. with the resist patterns of the PMMA 6 as a mask, by which the chromium film is removed by the prescribed amt. down to the inside from the resist pattern end. The stable and accurate transfer of the fine patterns approximate to the resolution limit is executed in this way.</p> |
