发明名称 FIELD-EFFECT TRANSISTOR TYPE OXYGEN SENSOR
摘要 PURPOSE:To increase response speed and measuring sensitivity by inserting and arranging a reference electrode film between a gate insulating film and a solid electrolyte film. CONSTITUTION:A tin film 52 and a tin fluoride film 54 are laminated to a gate insulating film 36 as a reference electrode film 50 and a lanthanum fluoride vapor deposition film is laminated thereon as a solid electrolyte film 38 and, further, a gate electrode film 40 composed of a platinum is formed thereon. This electrode film 40 is composed of platinum is formed into a reticulated structure having a large number of holes 44. By this constitution, the oxygen ions ionized by the catalytic action of the electrode film 40 and the electrolyte film 38 and a fluorine ion is liberated to the electrolyte film 38 to move and distribute therethrough but, since the electrode film 50 is present, the potential of the insulating film 36 and the electrolyte film 38 becomes stable and output voltage reaches a constant value within about 5 min and a response time is extremely shortened. By forming the electrode film into a reticulated structure, sensitivity is enhanced.
申请公布号 JPH03274452(A) 申请公布日期 1991.12.05
申请号 JP19900076259 申请日期 1990.03.26
申请人 TOYOTA CENTRAL RES & DEV LAB INC 发明人 ITO TADASHI;INAGAKI MASARU;TAGUCHI TOSHIYUKI
分类号 G01N27/414 主分类号 G01N27/414
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