| 摘要 |
<p>PURPOSE:To obtain a green color emitting LED having high light emitting efficiency by providing a light emitting layer holding layer made of indirect transition type GaAlAs on a light emitting layer using an InGaAlP layer. CONSTITUTION:A light emitting layer containing a p-n junction formed of a plurality of InxGayAl1-x-yP (0<=x, y<=1) layers, and a light emitting layer holding layer made of an indirect transition type Ga1-wAlwAs (0<=w<=1) is provided at the nonlight emitting surface side of the emitting layer. This manufacturing method of the LED includes the steps of vapor growing the light emitting layer 10 containing the junction formed of a plurality of InGaAlP layers 13 on a GaAs substrate, vapor growing the light emitting layer holding layer 15 made of indirect transition type GaAlAs on the layer 10, then removing the substrate, and mounting the layer 15 thereunder on a base 18. Thus, the LED having high light emitting efficiency can be manufactured.</p> |
