发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the occurrence of electromigration due to concentration of power by providing an emitter electrode on a comb-shaped wiring for an emitter, thereby dereasing the resistance component of the wiring, and operating the entire emitter region effectively. CONSTITUTION:After wirings 19a-19c at various parts are formed, an insulating film 1 is formed at a part corresponding to the upper part of an emitter region 16 on the comb-shaped wiring 19a for an emitter. An emitter electrode 2 is further provided from the upper part of the film 1. A through hole 3 is formed at the closest part to the base wiring 19b for the linking with the comb-shaped wiring 19a which is provided when the metal such as aluminum that is to become an emitter electrode is formed by vapor deposition. Thereafter, a passivation film comprising glass and the like is provided. Windows are opened at the lead-out parts of the emitter, a base and a collector. An emitter pad part 4, a base pad part 21 and a collector pad part 22 are provided. In this structure, the thickness of the aluminum electrode for the emitter in contact with the emitter region 16 is increased. Therefore, current concentration does not occur owing to the decrease in resistance component.</p>
申请公布号 JPH03273640(A) 申请公布日期 1991.12.04
申请号 JP19900073794 申请日期 1990.03.23
申请人 MATSUSHITA ELECTRON CORP 发明人 KITAHARA TOSHIYUKI;MIYAGI HIDEO
分类号 H01L29/73;H01L21/28;H01L21/3205;H01L21/331;H01L23/52;H01L29/43;H01L29/732 主分类号 H01L29/73
代理机构 代理人
主权项
地址