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发明名称
MANUFACTURE OF INSULATED GATE TYPE FIELD-EFFECT TRANSISTOR
摘要
申请公布号
JPH03273646(A)
申请公布日期
1991.12.04
申请号
JP19900075062
申请日期
1990.03.22
申请人
NEC CORP
发明人
ISHII MASAKI
分类号
H01L29/78;H01L21/336;H01L21/8234;H01L27/088
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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