| 摘要 |
PURPOSE:To increase connecting strength in a simple step by using an ordinary wire bonding device and to cope with the production of a small amount of many kinds of products readily by fusing the tip of a wire that is supplied into a wire bonding device, forming a ball, and forming the electrode by thermal contact bonding of the ball in the specified position. CONSTITUTION:A wire 12 comprising Au-2Si alloy is inserted through a capillary 13 of a wire bonding device. Then the discharge voltage of 30-80 V is applied across a discharge electrode and the tip of the above described thin wire. Discharging is generated, and the tip of the gold thin wire is heated and fused. Thus a ball 11 is formed. Then, the ball undergoes thermal contact bonding to a bonding pad 22 on the SiO2 surface of a semiconductor substrate 21. After the completion of the thermal contact bonding, the gold thin wire is lifted, the gold thin wire is cut out from the ball 11 and a bump 24 is formed. As the wire used, ordinary wire used in a wire bonding method can be utilized, but gold-based alloy and lead-based alloy are preferable. |
