| 发明名称 |
Semiconductor device having a trench for device isolation and method of fabricating the same. |
| 摘要 |
<p>A device-isolating trench (28) having a taper at its upper portion is formed in a silicon semiconductor substrate (22). Then, a silicon oxide film (32) is formed on the inner wall of the trench (28) and the surface of the semiconductor substrate (22) near the trench (28) by an oxidizing method, and polycrystalline silicon (33) is buried in the trench (28). <IMAGE></p> |
| 申请公布号 |
EP0459397(A2) |
申请公布日期 |
1991.12.04 |
| 申请号 |
EP19910108691 |
申请日期 |
1991.05.28 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIYASHITA, NAOTO;TAKAHASHI, KOICHI |
| 分类号 |
H01L21/306;H01L21/308;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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