Thin-film transistors.

摘要

A gate-insulated thin-film transistor is formed on a substrate with a blocking layer therebetween so that it is possible to prevent the transistor from being contaminated by impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and the gate insulator of the transistor in order that impurities such as alkali ions, dangling bonds and the like can be neutralized. By virtue of these measures the reliability of the device is improved.