| 摘要 |
PURPOSE:To manufacture a semiconductor memory having the large area with out using a large laser device by forming a plurality of first regions wherein memory cells are arranged and a second region wherein memory cells are not arranged in a memory cell array part, projecting laser light on each first region, and performing annealing. CONSTITUTION:For example, when a laminated CMOS-type SRAM of 4-M bits is manufactured, memories of every 2-M bits are arranged in each of first regions 14 and 15. The width of second region 16 is set at, e.g. 50mum or more. Polycrystalline Si thin films for forming thin film pMOS transistors are formed on the first regions 14 and 15. Excimer laser light is sequentially projected on each of the first and second regions 14 and 15, and the polycrystalline Si thin films are annealed. Thus the required treatments are performed, and the memory cell is completed. At this time, even if there is an error in position alignment of illuminated region as 11 and 12, a non-illuminated region 17 is formed in the second region 16 so that the illuminated regions are not over lapped. Wirings are formed in the second region of Al films and the like and brought into contact with the polycrystalline Si thin film within the first regions. |
