Manufacturing method of a channel in MOS semiconductor devices.

摘要

Formed on the element region (13) of an n-type semiconductor substrate (12) is a silicon oxide layer (14), on which a polysilicon layer (15) is formed. Boron ions, p-type impurities, are then implanted into the polysilicon layer (15), from which boron diffuses into the element region (13) via the silicon oxide layer (14), with the result that a p-channel region of the p-channel MOS transistor is formed.