| 摘要 |
PURPOSE:To obtain a semiconductor laser excitation solid-state laser device which is miniature and high in output power by a method wherein a pair of array-type semiconductor lasers is provided to each of reflecting points on the excitation surface of a solid-state laser medium at a certain angle which is determined taking the refractive index of the solid-state laser medium into consideration. CONSTITUTION:Two array type semiconductor lasers 2a and 2b are installed for each point on an excitation surface 1c of an Nd:YAG rod 1 and set taking an incident angle thetaLD at which laser rays are incident on the rod 1 into consideration. Laser rays emitted from the laser 2a are incident on the rod 1 as condensed by a fiber lens 3. At this point, provided that an incident angle, an outgoing angle, and the refractive indexes of air and the rod 1 are represented by thetaLD, thetaYAG, and etaAIR and etaYAG respectively, a formula I is satisfied. At this point, provided that etaAIR and etaYAG are set to 1 and 1.82 respectively, and thetaLD and thetaYAG are optimized taking conditions under which layer rays emitted from the solid laser are reflected at the excitation surface 1c into consideration, whereby an output nearly half as much as the total input can be obtained. |
