| 摘要 |
PURPOSE:To increase the switching characteristics without losing the characteristics of a transistor (TR), by connecting an MOSFET in parallel between the base and emitter of a front stage TR. CONSTITUTION:In a Dirlington circuit consisting of a front stage TR1 and a post stage TR2, an MOSFET1 is connected in parallel between the base and emitter of the TR1. Since the forward characteristics of the MOSFET shows a straight characteristic for the forward performance at one-state difference from a normal diode characteristic, a forward drop voltage can be reduced more than that of a Schottky diode at a certain forward current range by using this straight line region. Thus, the effect of disappearance of stored charge of the TR2 can more effectively be acted, allowing to improve the switching characteristics much more. |
