| 摘要 |
Charges are accumulated in photosenstive elements on a semiconductor substrate and are transferred into a memory portion or to vertical shift registers, with transfer occurring at a high speed. The charges produce an output series of electrical signals which are delivered at a normal speed. The memories and similar portions of the substrate may be completely light-shielded. An amount of the charges flowing into the first vertical shift register may be made extremely small due to the high-speed transfer, in order to minimize a "smear" phenomenon (i.e., charges which stray through the integrated semiconductor material). Also, an intensive incident light might cause a charge overflow (called "blooming") from the photosensitive elements into the nearby first vertical shift register currently transferring the charges. By operating the first vertical shift register at a high speed, the charges of one picture field may be stored temporarily in the memory portion to reduce the use time of the first vertical shift register. Thus, the remaining available use time of the first vertical shift register may be employed to discard the charges collected undesirably in the first vertical shift registers.
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