| 摘要 |
PURPOSE:To obtain a semiconductor device which is hardly influenced by a defect in a polysilicon layer by a method wherein two each of load resistors whose resistance value is made higher are bonded in parallel and they are arranged so as to correspond to two transistors for memory use. CONSTITUTION:Two load resistor 1, and 2 whose resistance value is high are bonded in parallel and are formed in frame shapes at second polysilicon layers formed separately by sandwiching an interlayer insulating film 13 so as to be respectively adjacent to stepped parts of N-channel transistors 3 and 4 formed in a first polysilicon layer. Consequently, even when a defect is caused in the second polysilicon layers and one out of two is disconnected, a circuit can be operated by the other. |
