| 摘要 |
PURPOSE:To flatten the surface of a polycrystalline semiconductor film by a method wherein, after a semiconductor layer is formed, ions are implanted in an amount at a solid-solution limit concentration or higher, the surface of the semiconductor layer is flattened and an insulating film is formed on the semiconductor layer. CONSTITUTION:An interlayer insulating film 4 is patterned; a contact hole 4a is formed on an N<+> type diffusion layer 1d; after that, a first polycrystalline silicon film 6 having a film thickness of 100-nm is grown on the whole surface by a CVD method. When germanium ions are implanted into the first polycrystalline silicon film 6 under conditions in an injection amount of 9.6X10<15>/cm<2> or higher and at an energy of 40kev, the surface of the polycrystalline silicon film 6 is flattened. After that, phosphorus ions are implanted into the polycrystalline silicon film. The first polycrystalline silicon film 6 is patterned. The polycrystalline silicon film 6 is removed; it is used as a storage electrode layer 11 for a capacitor. In addition, the surface of the polycrystalline silicon film 6 is oxidized thermally; an SiO2 film 7 which is used as a dielectric 12 and whose film thickness is 10nm is grown. |
