| 摘要 |
PURPOSE:To suppress an influence due to deviation of a detecting position of an alignment mark caused by the orientation of film growth by flattening the surface, on the bottom part of a recessed part, of a film constituting a semiconductor element at a specific position of a wafer substrate. CONSTITUTION:The bottom face 2a of a film 2 formed on a substrate 1 provided with an alignment mark by means of a level difference 1a is generally swelled. Accordingly, a resist pattern 7 exposing only to the bottom face 2a is formed, and flattening of the swelled part on the bottom face 2a of the pattern is performed by anisotropic etching in order to perform positioning by this pattern. Accordingly, an influence of uneven sticking of a film on an alignment signal is minimized so that positional relation between the pattern of the film lower part and the resist pattern becomes correct. |
