| 摘要 |
PURPOSE:To increase a carrier injection efficiency, to enhance the light-emitting efficiency of an element, to reduce the strain of a light-emitting layer and to enhance its crystal by a method wherein the carrier concentration of a first crystal layer to be used as a main light-emitting layer is specified. CONSTITUTION:The following are formed: an n-type GaAs1-xPx layer 2 as a gradual transmission layer, in about 50mum, which is vapor-grown on the main face of an N-type GaP substrate 1; an n-type GaAs0.35P0.65 layer 3 which is laminated on it, vapor-grown and formed and whose composition ratio is definite; and an n-type GaAs0.35P0.65 layer 4 which is doped with nitrogen atoms in the light-emitting center from a halfway part of a vapor growth operation. The layer thickness of the N-doped layer 4 is set at about 10 to 20mum. P-type impurities such as, e.g. zinc or the like are diffused to the vapor-grown substrate at a carrier concentration of 1 to 5X10<-15>cm<-3>, and a junction face is formed inside the N-doped layer 4. The carrier concentration of the N-doped layer 4 as a light-emitting layer is limited to a range of 1 to 5X10<15>cm<-3>. When it is lower than the numerical-value range, a passing resistance is increased and a forward voltage is raised. |
