| 摘要 |
<p>PURPOSE:To enable pattern formation of a fine line width by depositing a silicon oxide film or a silicon nitride film on a surface, by applying a positive resist, by carrying out exposure and development, by providing an opening of a pattern of a fine line width, by carrying out etching by plasma etching, and by etching a foundation of a polyimide film by plasma ash. CONSTITUTION:A silicon nitride film 5 is deposited on the surface of a polyimide film 4, a positive resist 6 is applied thereto, and an opening of a pattern of a fine line width is shaped through exposure and development. The silicon nitride film 5 is etched by plasma etching (plasma formed by adding several % of oxygen to Freon 14) using the positive resist 6 as a mask. The polyimide film 4 is etched by plasma ash (plasma formed by adding several % of Freon 14 to oxygen or oxygen plasma) and a via hole 7 is formed. In the process, the positive resist 6 on the surface is removed by ashing. Thereafter, the silicon nitride film 5 is removed by plasma etch and a second Al wiring layer is formed on the surface.</p> |
