| 摘要 |
PURPOSE:To obtain semiconductor memories of less power consumption even in high-density manufacture by making the gate electrode of a switching transistor serve as the input terminal of an inverter and the node between a switching transistor and a diode as the output terminal of an inverter. CONSTITUTION:A switching transistor A1 and a load diode A are connected in series to constitute an inverter; further, a switching transistor B2 and a load diode B4 are connected in series to constitute another inverter. The gate electrodes of the switching transistors A1, B2 should be the input terminal, and the node between a load diode and a switching transistor the output terminal. Therefore, current flowing through an inverter is limited by the load of an inverter; however, the characteristics of a load inverse diode show saturation characteristics to source voltage, and the current value can be set very low. This design can provide semiconductor memories easy of low-power consumption action and low-voltage action with high-density packaging. |
