MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

The semiconductor device with bipolar transistor, nMOS and pMOS formed on one chip is manufactured by the following steps; (a) forming twin buried layers (2,3) on silicon substrate (1); (b) epitaxial growing the silicon (4) on the buried layer; (c) forming a oxide layer (5) and nitride layer (6) on (4); (d) removing a part of (6),(5) and (4) in sequence by common lithography processing; (e) implanting the first conductive type impurity at the etched region of (4); (f) forming a LOCOS layer (9) on the etched epitaxial layer (4); (g) implanting the second conductive type impurity at the non-etched epitaxial layer after etching the nitride layer (6); etching the LOCOS layer and oxide layer (5).