| 摘要 |
PURPOSE:To provide a field-effect transistor with an inverse T-shaped gate with good reproducibility by forming a conductive film on a gate insulating film, forming a coating with an opening, and forming another conductive film in the opening. CONSTITUTION:A first insulating film 33, a first conductive film 34, and a first coating 35 are sequentially formed on a p-type semiconductor silicon substrate 31. A hole is opened in the coating 35 to expose part of the first conductive film 34. The hole is filled with a second conductive film 37, and the coating 35 is removed to expose the side faces of the second conductive film 37. A second insulating film 38 is formed, and it is etched so that it may remain on the side walls of the second conductive film 37. The first conductive film 34, masked with the second insulating film 38, is patterned to form an inverse T-shaped gate electrode 38 that is composed of the first and second conductive film 34 and 37. In this manner, a field effect transistor with an inverse T-shaped gate is easily produced with good reproducibility.
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