| 摘要 |
PURPOSE:To form low resistive contact independently of the conductivity type of a diffusion layer, by using single-crystallized Al as a metal wiring layer, and reducing an Si layer of the hole bottom part to which layer impurities are not added, by using W. CONSTITUTION:When a contact hole 7 is formed in an insulating film 6, an amorphous semiconductor film 8, to which impurities are not added, is formed on the whole surface of the insulating film 6 on a single crystal substrate 1. The amorphous semiconductor film 8 to which impurities are not added is single-crystallized, after single crystal Al 9 is formed on a single-crystallized semiconductor film 8, the single crystal Al 9 in the contact hole 7 is eliminated; tungsten W 10 is buried in an eliminated region 7; and at this time, the single crystallized semiconductor film 8, existing in the bottom part of a contact hole 7, to which film impurities are not added is reduced. Thereby low resistive contact can be formed for a diffusion layer of any kind of conductivity type. |
