| 摘要 |
PCT No. PCT/CA91/00177 Sec. 371 Date Jan. 26, 1993 Sec. 102(e) Date Jan. 26, 1993 PCT Filed May 28, 1991 PCT Pub. No. WO91/19317 PCT Pub. Date Dec. 12, 1991.A method of planarizing a semiconductor wafer having interconnect tracks of formed thereon, comprises applying a layer of inorganic spin-on glass to the wafer, curing the spin-on glass at a temperature not exceeding about 450 DEG C., then placing the wafer in a dielectric deposition chamber, subjecting the wafer to in situ disconnection and outgassing of water and reaction by-products, and then capping the wafer in a moisture-free environment with a protective dielectric layer resistant to moisture diffusion. |
