| 摘要 |
PURPOSE:To obtain a chalcopyrite based compound film without using very poisonous gas, by spouting Se compound aqueous solution against a substrate from a spray nozzle, in a state that the substrate on which Cu and X are stuck is kept at a high temperature. CONSTITUTION:After a film 33 composed of Cu and X elements is formed on a substrate 21, solution of compound is spouted, in a spray type, against the surface of the film 33 on the substrate 21 heated at a specified temperature. Said compound contains selenium and is decomposed at a specified temperature. Hence the compound in the aqueous solution which is spouted in the spray type is thermally decomposed in the vicinity of the surface of the layer 33 composed of Cu and X elements on the heated substrate 21. Produced selenium vapor reacts with the layer on the substrate, and chalcopyrite based compound 23 shown by a molecular formula CuXSe2 is formed. Thereby a chalcopyrite based compound film 23 having almost stoichiometric composition can easily be obtained, without using very poisonous gas. |
