PARTIAL FORMATION OF MIXED CRYSTAL OF QUANTUM WELL STRUCTURE LAYER, MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT USING SAME AND MANUFACTURE OF WAVELENGTH SELECTIVE DETECTING ELEMENT USING SAME SEMICONDUCTOR LASER ELEMENT,申请号JP19900066601-传众专利搜索

发明名称	PARTIAL FORMATION OF MIXED CRYSTAL OF QUANTUM WELL STRUCTURE LAYER, MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT USING SAME AND MANUFACTURE OF WAVELENGTH SELECTIVE DETECTING ELEMENT USING SAME SEMICONDUCTOR LASER ELEMENT
摘要
申请公布号	JPH03268377(A)	申请公布日期	1991.11.29
申请号	JP19900066601	申请日期	1990.03.16
申请人	FURUKAWA ELECTRIC CO LTD:THE	发明人	NAKAI AKINOBU
分类号	H01L31/10;H01S5/00	主分类号	H01L31/10
代理机构		代理人
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