| 摘要 |
<p>A magnetoresistance effect element which comprises a substrate and at least two layers of magnetic thin films formed on the substrate via non-magnetic thin film layers. The element is characterized in that the coercive forces of the magnetic thin films adjoining each other via the non-magnetic thin film layer are different and the thicknesses of the magnetic and non-magnetic thin film layers are 200 angstroms or less respectively. The element exhibits a large rate of resistance change of several to several tens % in a small external magnetic field of about several to several tens Oe. Therefore, a highly sensitive magnetic sensor of magnetoresistance type and a magnetic head of magnetoresistance type capable of high-density magnetic recording can be provided.</p> |
