发明名称 REAKTIONSBARRIERE FUER EINE MEHRSCHICHTIGE STRUKTUR IN EINER INTEGRIERTEN SCHALTUNG.
摘要 A reaction barrier is formed at an interface region between two layers (12,14) of a multilayer composite integrated circuit by implating one or more active atomic species at energies effective to place the atomic species at or near the interface (16). A further step may include annealing the structure formed above to promote efficacy of the reaction barrier. <IMAGE>
申请公布号 DE431721(T1) 申请公布日期 1991.11.28
申请号 DE19900302976T 申请日期 1990.03.20
申请人 RAMTRON CORP., COLORADO SPRINGS, COL., US;NMB SEMI CONDUCTOR, TATEYAMA, CHIBA, JP 发明人 STEVENS, HENRY E., COLORADO SPRINGS, COLORADA 80906, US;MAEKAWA, MASHAHIRO, TATEYAMA-SHI, CHIBA-KEN, US
分类号 H01L21/265;H01L21/28;H01L21/285;H01L23/532;H01L29/43;H01L29/45;(IPC1-7):H01L21/90;H01L23/485 主分类号 H01L21/265
代理机构 代理人
主权项
地址