发明名称 PHOTON ASSISTED CVD APPARATUS AND METHOD
摘要 The invention describes apparatus and associated method suitable for use of growth of materials by chemical vapour deposition techniques. The invention provides an inner member incorporated within a turret (28) of photon assisted chemical vapour deposition apparatus, whereby the inner member (31) enables fogging constituents (e.g. settling of reaction products) to be directed away from a window within the turret. Incorporation of the inner member (31) within the turret (28) provides a cavity between the inner member and the turret and a constriction (62). On flow of purging gas (30) into the turret it flows into the cavity (61), and when the cavity (61) is substantially filled the window (29) purging gas (30) is forced out of the constriction (62) and into the volume of the turret (28) which is substantially adjacent to the window (29). The invention also describes a method by which the above apparatus can be operated. Typically the inner member is a component designed to co-operate with the turret and made of inert material.
申请公布号 WO9118129(A1) 申请公布日期 1991.11.28
申请号 WO1991GB00723 申请日期 1991.05.07
申请人 THE SECRETARY OF STATE FOR DEFENCE IN HER BRITANNI 发明人 HILL, HAROLD;HUNT, DAVID, JAMES;IRVINE, STUART, JAMES, CURSON
分类号 C23C16/44;C23C16/455;C23C16/48 主分类号 C23C16/44
代理机构 代理人
主权项
地址
您可能感兴趣的专利