SELF-ALIGNED SILICIDED BASE BIPOLAR TRANSISTOR AND RESISTOR AND METHOD OF FABRICATION,申请号EP19910104215-传众专利搜索

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发明名称	SELF-ALIGNED SILICIDED BASE BIPOLAR TRANSISTOR AND RESISTOR AND METHOD OF FABRICATION
摘要
申请公布号	EP0451553(A3)	申请公布日期	1991.11.27
申请号	EP19910104215	申请日期	1991.03.19
申请人	NATIONAL SEMICONDUCTOR CORPORATION	发明人	DELONG, BANCHERD;GANSCHOW, GEORGE;BLAIR, CHRISTOPHER SCOTT;CRABB, THOMAS SCOTT
分类号	H01L21/02;H01L21/285;H01L21/331;(IPC1-7):H01L29/73;H01L27/06	主分类号	H01L21/02
代理机构		代理人
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