| 发明名称 |
Ohmic contact electrodes for n-type semiconductor cubic boron nitride. |
| 摘要 |
<p>An ohmic contact electrode formed on an n-type semiconductor cubic boron nitride by using a IVa metal; an alloy with a IVa metal; a metal with Si or S; an alloy with Si or S; a metal with B, Al, Ga, or In; an alloy with B, Al, Ga, or In; a Va metal; or an alloy with a Va metal. <IMAGE></p> |
| 申请公布号 |
EP0458353(A2) |
申请公布日期 |
1991.11.27 |
| 申请号 |
EP19910108451 |
申请日期 |
1991.05.24 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TOMIKAWA, TADASHI;KIMOTO, TUNENOBU;FUJITA, NOBUHIKO |
| 分类号 |
H01L29/20;H01L29/45 |
主分类号 |
H01L29/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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