| 摘要 |
<p>A voltage divider comprises a string of resistive elements (RN0 to RNn) implemented by an elongated n-type impurity region (14) formed in a lightly doped p-type semiconductor substrate (11), and n-channel type switching transistors (QN1 to QNn) with a short channel length formed in a heavily doped p-type well (12) in the semiconductor substrate and associated with the resistive elements for coupling one of the associated resistive elements to an output node (OUT). The lightly doped semiconductor substrate (11) decreases parasitic capacitance coupled to the elongated n-type impurity region (14) so that the string of the resistive elements is improved in propagation speed and bias dependency. <IMAGE></p> |
