Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion and method of forming same.

摘要

An improved plasma etching apparatus (20) is disclosed comprising an etch chamber (22) having inner metal surfaces with a conductive coating (42) formed thereon which is capable of protecting such inner metal surfaces from chemical attack by reactant gases such as halogen-containing gases used in said chamber (22) during plasma etching processes. In a preferred embodiment, at least about 0,2 micrometers of a carbon coating is formed on the inner metal surfaces of the etch chamber (22) by a plasma-assisted CVD process using a gaseous source of carbon and either hydrogen or nitrogen or both.