发明名称 METHOD OF MANUFACTURING A LIGHT EMITTING ELEMENT
摘要 A blue light emitting diode which has a multiple layer structure and is grown on a semiconductor crystalline substrate, wherein zinc of a group II element of the periodic table, lithium, sodium, or potassium of group VI elements are used. These elements and their compounds are used as impurities to be introduced into the construction when it is at the condition of vapor growing. A blue light emitting diode has a pair of Ohmic electrodes, an n-type semiconductor layer and a p-type semiconductor layer. These layers are grown from a vapor phase on the substrate and sandwiched between the electrodes.
申请公布号 US5068204(A) 申请公布日期 1991.11.26
申请号 US19880173067 申请日期 1988.03.25
申请人 MISAWA CO. LTD. 发明人 KUKIMOTO, HIROSHI;MITSUISHI, IWAO;YASUDA, TAKASHI
分类号 H01L33/00;H01L33/28 主分类号 H01L33/00
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