| 摘要 |
<p>PURPOSE:To form a minute pattern by exposing a photoresist by the beam at the specified incident angle to a substrate. CONSTITUTION:When the photoresist on a semiconductor substrate 1 is exposed with a beam hmu for exposure, whose incident angle theta is smaller than 90 deg., through a mask 3, and is developed next, a minute pattern with a width Le narrower than the opening width of the photoresist is formed at the substrate 1.</p> |
