| 摘要 |
In one embodiment of the invention, an inverter inverts an input signal and provides this inverted input signal into the base of an NPN bipolar transistor, acting as a pull-up device, whose collector is coupled to a positive power supply voltage. The input signal coupled to the input of the inverter is also coupled to the gate of a large N-channel MOSFET, acting as a pull-down device, having its drain coupled to the emitter of the bipolar transistor and its source coupled to ground. The common node of the bipolar transistor and the N-channel MOSFET provides the output signal of the driver. This driver uses much less area than a standard two-bipolar transistor BiCMOS driver with substantially equal performance. A small P-channel MOSFET having its gate connected to the input signal may be connected across the base and emitter of the bipolar transistor to provide a full output voltage at the output of the driver.
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