| 摘要 |
PURPOSE:To obtain memory cells utilizing high speed switching elements and the storage effect by light irradiation, by making superconducting thin films from material made by adding Pb and/or In to a ternary semiconductor of lead chalcogenide. CONSTITUTION:A superconducting thin film 1, having a photoconductive effect, of PbSnTe, etc., containing Pb and/or In added as impurities is formed on a substrate 3 made from BaF2, etc. Following this, electrodes 2a, 2b of Au or In, etc., are provided on both ends of the thin film 1, and a superconducting photofunctioning element is constituted. By doing this, the thin film 1 is switched from a normal conducting state to a superconducting state very quickly, when light is emitted under a specified temperature. Besides, adding In to the ternary semiconductor of the thin film 1 as impurities keeps the superconducting state forever, even if the light emission is stopped. Accordingly, very high speed photo switches can be obtained. In addition, they can be used as memory cells.
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