发明名称 PRODUCTION OF ALUMINUM NITRIDE SUBSTRATE
摘要 PURPOSE:To roughen the mirror-polished surface of an AlN-based insulating substrate for forming a thin film and to enhance the adhesive strength of a formed thin film by etching the substrate with a specified soln. CONSTITUTION:An etching soln. is prepd. by mixing 1wt.% EDTA, 7-8wt.% NH4OH and 12-14wt.% H2O2 with 40-45wt.% H2O. AlN powder is mixed with a prescribed amt. of a sintering aid and a binder, this mixture is molded and fired and the surface of the resulting AlN-based substrate for forming a thin film is mirror-polished. This polished surface is etched with the etching soln.
申请公布号 JPH03265586(A) 申请公布日期 1991.11.26
申请号 JP19900067877 申请日期 1990.03.15
申请人 TOSHIBA CORP 发明人 NAKAGAWA NORIKO
分类号 C04B35/581;C04B35/58;C04B41/91 主分类号 C04B35/581
代理机构 代理人
主权项
地址