发明名称 High-gain amplifier with low noise and low power dissipation, using field effect transistors
摘要 The amplifier comprises a first field effect transistor controlled by the input signal of the amplifier and a current generator for the supply of said first transistor. The latter is biased so as to operate in its linear region and in cascade with it there is provided at least one second field effect transistor biased in a similar way, suitable for raising the output impedance of the amplifier, and thus its gain, to a value corresponding to the desired use.
申请公布号 US5068623(A) 申请公布日期 1991.11.26
申请号 US19900521998 申请日期 1990.05.11
申请人 ISTITUTO NAZIONALE DI FISICA NUCLEARE 发明人 CAMIN, DANIEL V.;PESSINA, GIANLUIGI;PREVITALI, EZIO
分类号 H03F1/22 主分类号 H03F1/22
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