发明名称 METHOD FOR CUTTING LEAD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the reliability in quality by imparting such a plastic deforming force that the cut face of a lead subjected to an external plating treatment has a slope having a grade descending toward the front end part of the lead to the lead at the time of cutting the above-mentioned lead by means of a cutting die. CONSTITUTION:The semiconductor device having the lead 11 for external connection which is previously subjected to the external plating treatment is mounted on a receiving die 4. This lead 11 is then cut by the cutting die 12. Such plastic deforming force which the cut surface 11a of the lead has the slope having the grade descending toward the front end of the lead is imparted to the lead 11, by which the lead is cut. Since plating 1 can be stuck to the cut surface 11a of the lead 11 at the time of cutting of the lead, the cut surface 11a of the lead 11 can be coated with the plating 1 and the solder adhesiveness of the ensuring stage is assured. An increase in electric resistance, a decrease in joining strength, corrosion of the cut surface or the generation of a appearance defect is prevented in this way and the reliability in quality is improved.
申请公布号 JPH03264140(A) 申请公布日期 1991.11.25
申请号 JP19900063125 申请日期 1990.03.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIEDA SAONORI
分类号 B23D15/00;B21F11/00;H01L23/50;H05K13/04 主分类号 B23D15/00
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