发明名称 |
SOLAR CELL AND MANUFACTURE THEREOF |
摘要 |
PURPOSE:To enable solar energy to be converted more efficiently and obtain a solar cell at a lower cost by allowing a mutually contacting semiconductor layer between a solar cell for a low-energy light and that for a high-energy light to be of a same conductive type and by forming an intermediate electrode at one of those semiconductor layers. CONSTITUTION:A pn junction is formed by depositing an n-type part 3 and a p-type part 4 of a CuInSe2 thin film in order from the lower, part on a lower- part electrode 2 where Mo is formed on a glass substrate 1 for producing a cell Sl for a low-energy light and then a p-type CdTe thin film 6 and an n-type ZnCdS thin film 7 are deposited in sequence for forming a hetero junction and for producing a cell S2 for a high-energy light. Au and ITO are formed as an intermediate electrode 5 and the transparent upper electrode 2. |
申请公布号 |
JPH03263880(A) |
申请公布日期 |
1991.11.25 |
申请号 |
JP19900063155 |
申请日期 |
1990.03.14 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NISHITANI MIKIHIKO;HIRAKAWA KAZUE;TERAUCHI MASAHARU;HIRAO TAKASHI |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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