| 摘要 |
PURPOSE:To enable photoelectric conversion efficiency of a photovoltaic device to be improved by forming at least one layer of either a p layer or an n layer with a fine crystal semiconductor and by inserting an insulation thin film into at least between the p layer and an i layer or between the i layer and the n layer. CONSTITUTION:A light-receiving surface electrode 2 consisting of TCO such as SnO2 and ITO is formed on a substrate 1 with a light-transmission property of glass etc. Then, a p layer of a hydrogenated fine crystal silicon carbide 3 as a fine crystal semiconductor, a silicon nitride film 4 as an insulation thin film, an i-type amorphous silicon 5 as an amorphous semiconductor, and then an n-type amorphous silicon 6 are formed. Further, a rear-surface electrode 7 such as Al, ITO/Ag is formed. The film thickness of the silicon nitride film 4 is set to 10-100Angstrom . |
