| 摘要 |
PURPOSE:To provide a wire having excellent fracture strength and joining strength even if wire diameter is reduced to the extent greater than heretofore and capable of making IC compact and high-density by providing a composition in which specific amounts of Cu are incorporated to Au. CONSTITUTION:This bonding wire for semiconductor device has a composition consisting of, by weight, 1-5% Cu and the balance Au and also has <=20mu wire diameter, >=30kg/mm<2> fracture strength, and 1-8% fracture elongation. By incorporating 1-5% Cu to Au, Cu is allowed to enter perfectly into solid solution in Au, by which the strength of the bus bar can be improved and, further, joining strength can be increased. Accordingly, a fracture strength of >=30kg/mm<2> can be satisfied even if the wire is formed into a fine wire of <=20mu wire diameter. Moreover, one or more elements among Ca, Ge, Be, La, and In can further be incorporated to the above composition by 0.0003-0.001wt.% in total. |
