| 摘要 |
PURPOSE:To prevent the composition distribution, in which P is prominent, in a grown crystal along the flow of a gas because the decomposition speed of an As raw material is largely different from that of a P raw material in an MOVPE method by a method wherein H2AsCnH2n+1 (where n=1, 2 or 3) or AsH3 is used as the As raw material and H2PC4H9 is used as the P raw material. CONSTITUTION:When the crystal of a compound semiconductor containing As and P is grown by an metal organic vapor epitaxial growth method, H2 AsCnH2n+1 (where n=1, 2 or 3) is used as an As raw material and H2PC4H9 is used as a P raw material. When the crystal of the compound semiconductor containing As and P is grown by the metal organic vapor epitaxial growth method, AsH3 is used as the As raw material, H2PC4H9 is used as the P raw material and the crystal is grown in a low-pressure atmosphere. For example, EtAsH2 corresponding to n=2 of H2AsCnH2n+1 is combined with tBPH2; TMI and TEG are used as raw material for In and Ga; an InP 100 substrate is used as a substrate; hydrogen is used as a carrier gas; a growth pressure is set at 0.1 atmosphere; and a growth temperature is set at 600 deg.C. Thereby, an InGaAsP crystal is grown on the InP substrate. |
