| 摘要 |
<p>PURPOSE:To nearly disregard a voltage drop by using a substrate obtained by forming a multi-layer thin film minute wiring board on a multi-layer power source substrate in which a thick plate material consisting of Cu, Al, Au or their alloy becomes a power source layer. CONSTITUTION:A semiconductor element IC is connected to a substrate consisting of a multi-layer power source substrate Lv and a multi-layer thin film minute wiring board Ls through a soft structure lead Cf by solder Cs. The multi-layer power source substrate Lv is constituted of power source Layers V1-V4 for supplying plural differential potentials containing a ground, and the power source layers V1-V4 are insulated from each other by an organic insulating material of a polyimide compound. Also, each power source layer is made of a thick plate of Cu, Al, Au or their alloy material. In such a way, with respect to feed to a large power consumption semiconductor element, a mounting structure provided with a feeding substrate which can nearly disregard a voltage drop can be obtained.</p> |
